| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
2SB1607 |
Trans GP BJT PNP 80V 7A |
New Jersey Semiconductor |
| 1382 |
2SB1607 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 1383 |
2SB1607 |
Silicon PNP Power Transistors TO-220F package |
Savantic |
| 1384 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1385 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 1386 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 1387 |
2SC1609 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 1388 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 1389 |
2SC2921 |
POWER TRANSISTORS(15A,160V,150W) |
MOSPEC Semiconductor |
| 1390 |
2SC3116 |
NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications |
SANYO |
| 1391 |
2SC3117 |
NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications |
SANYO |
| 1392 |
2SC313 |
Trans GP BJT NPN 160V 0.7A 3-Pin TO-126 |
New Jersey Semiconductor |
| 1393 |
2SC3787 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications |
SANYO |
| 1394 |
2SC4160 |
NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications |
SANYO |
| 1395 |
2SC4160 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
| 1396 |
2SC4613 |
160V/700mA Switching Applications |
SANYO |
| 1397 |
2SD1160 |
Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications |
TOSHIBA |
| 1398 |
2SD1603 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 1399 |
2SD1604 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104 |
Hitachi Semiconductor |
| 1400 |
2SD1606 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 1401 |
2SD1606 |
Silicon NPN Darlington Transistor |
Hitachi Semiconductor |
| 1402 |
2SD1606 |
Transistors>Switching/Bipolar |
Renesas |
| 1403 |
2SD1608 |
Power Transistor - Silicon NPN Triple Diffused Planar Darlington Type - Complementary Pair with 2SB1108 |
Panasonic |
| 1404 |
2SD1608 |
Medium Speed Power Switching |
Unknow |
| 1405 |
2SD1609 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1406 |
2SD1609 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 1407 |
2SJ160 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 1408 |
2SJ160 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 1409 |
2SJ160 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 1410 |
2SK1160 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
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