No. |
Part Name |
Description |
Manufacturer |
1261 |
MAX7032EVKIT-315 |
Low-Cost, Crystal-Based, Programmable, ASK/FSK Transceiver with Fractional-N PLL |
MAXIM - Dallas Semiconductor |
1262 |
MAX7032EVKIT-433 |
Low-Cost, Crystal-Based, Programmable, ASK/FSK Transceiver with Fractional-N PLL |
MAXIM - Dallas Semiconductor |
1263 |
MAX7032EVSYS-315 |
Low-Cost, Crystal-Based, Programmable, ASK/FSK Transceiver with Fractional-N PLL |
MAXIM - Dallas Semiconductor |
1264 |
MAX7032EVSYS-433 |
Low-Cost, Crystal-Based, Programmable, ASK/FSK Transceiver with Fractional-N PLL |
MAXIM - Dallas Semiconductor |
1265 |
MAX7044 |
300MHz-to-450MHz Low-Power, Crystal-Based ASK Transmitter |
MAXIM - Dallas Semiconductor |
1266 |
MAX7044AKA |
300MHz to 450MHz High-Efficiency, Crystal-Based +13dBm ASK Transmitter |
MAXIM - Dallas Semiconductor |
1267 |
MAX7044AKA+ |
300MHz to 450MHz High-Efficiency, Crystal-Based +13dBm ASK Transmitter |
MAXIM - Dallas Semiconductor |
1268 |
MAX7044AKA+T |
300MHz to 450MHz High-Efficiency, Crystal-Based +13dBm ASK Transmitter |
MAXIM - Dallas Semiconductor |
1269 |
MAX7044AKA-T |
+2.1 V to +3.6 V, 300 MHz to 450 MHz high-efficiency, crystal-based+13 dBm ASK transmitter |
MAXIM - Dallas Semiconductor |
1270 |
MC13751 |
MC13751 Technical Data Sheet: Dual-Band Upmixer and Driver Amplifier |
Motorola |
1271 |
MC145173 |
Dual-Band PLL Frequency Synthesizer with ADC and Frequency Counter |
Motorola |
1272 |
MC145173DW |
Dual-Band PLL Frequency Synthesizer with ADC and Frequency Counter |
Motorola |
1273 |
MC33170-D |
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal |
ON Semiconductor |
1274 |
MC33170DTB |
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal |
ON Semiconductor |
1275 |
MC33170DTBR2 |
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal |
ON Semiconductor |
1276 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
1277 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
1278 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
1279 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
1280 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
1281 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
1282 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
1283 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
1284 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
1285 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
1286 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
1287 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
1288 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
1289 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
1290 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
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