| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1292 |
MJ901 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1293 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1294 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1295 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1296 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1297 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1298 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1299 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1300 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1301 |
MRA1214-55H |
L-Band High Power 55W 1200-1400MHz |
TRW |
| 1302 |
MS2207 |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
Advanced Power Technology |
| 1303 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 1304 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 1305 |
NE6510179 |
1 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1306 |
NE6510179A |
1 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1307 |
NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1308 |
NE6510379A |
3 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1309 |
NE6510379A-T1 |
3 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1310 |
NE651R479A |
0.4 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1311 |
NE651R479A-T1 |
0.4 W L-BAND POWER GaAs HJ-FET |
NEC |
| 1312 |
NES1818-20B |
L-BAND Power GaAs MESFET |
NEC |
| 1313 |
NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 1314 |
NES1823P-100 |
100W L-BAND PUSH-PULL POWER GaAs MESFET |
NEC |
| 1315 |
NES1823P-50 |
50 W L-BAND PUSH-PULL POWER GaAs MES FET |
NEC |
| 1316 |
PCF5079 |
Dual-band power amplifier controller for GSM, PCN and DCS |
Philips |
| 1317 |
PCF5079HK |
Dual-band power amplifier controller for GSM, PCN and DCS |
Philips |
| 1318 |
PCF5079HK/C/1 |
PCF5079; Dual-band power amplifier controller for GSM, PCN and DCS |
Philips |
| 1319 |
PCF5079T |
Dual-band power amplifier controller for GSM, PCN and DCS |
Philips |
| 1320 |
PMB8680 |
Dual-Band RF Transceiver for WLAN System Solutions |
Infineon |
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