| No. |
Part Name |
Description |
Manufacturer |
| 12631 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 12632 |
MJ-2505 |
2.5mm AUDIO JACK-MONO |
etc |
| 12633 |
MJ1480 |
PCM A-LAW codec - Digital Controller - 8-BIT companded A-LAW A-D and D-A converter |
PLESSEY Semiconductors |
| 12634 |
ML2254 |
2-Channel Mixing Oki ADPCM Algorithm-Based Speech Synthesis LSI |
OKI electronic componets |
| 12635 |
ML22Q54 |
2-Channel Mixing Oki ADPCM Algorithm-Based Speech Synthesis LSI |
OKI electronic componets |
| 12636 |
ML46580S-992 |
High reliability semiconductor-beam lead gallium arsenide tuning varactor diode |
MA-Com |
| 12637 |
ML46580S-992 |
High Reliability Semiconductor . Beam Lead Gallium Arsenide Tuning Varactor Diode |
Tyco Electronics |
| 12638 |
MLED440 |
Miniature RED LED PN Gallium Arsenide Phosphide |
Motorola |
| 12639 |
MLED445 |
Miniature RED LED PN Gallium Arsenide Phosphide |
Motorola |
| 12640 |
MLED50 |
Visible RED LED PN Gallium Arsenide Phosphide 120mW |
Motorola |
| 12641 |
MLED500 |
Low cost RED LED PN Gallium Arsenide Phosphide |
Motorola |
| 12642 |
MLED55 |
Visible RED LED PN Gallium Arsenide Phosphide 120mW |
Motorola |
| 12643 |
MLED60 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 12644 |
MLED600 |
RED LED PN Gallium Arsenide Phosphide 120mW |
Motorola |
| 12645 |
MLED610 |
Visible RED LED PN Gallium Arsenide Phosphide 350mW |
Motorola |
| 12646 |
MLED640 |
Panel Mount LED Visible RED PN Gallium Arsenide Phosphide |
Motorola |
| 12647 |
MLED655 |
Panel Mount LED RED PN Gallium Arsenide Phosphide |
Motorola |
| 12648 |
MLED660 |
Panel Mount LED RED PN Gallium Arsenide Phosphide - Deep Red Contrasting LENS |
Motorola |
| 12649 |
MLED90 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 12650 |
MLED900 |
Infrared LED 900nM PN Gallium Arsenide 120mW |
Motorola |
| 12651 |
MLED910 |
Infrared LED 900nM PN Gallium Arsenide 350mW |
Motorola |
| 12652 |
MLED92 |
Low Cost Infrared-Emitting Diode PN Gallium Arsenide |
Motorola |
| 12653 |
MM54C200 |
256-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12654 |
MM54C89 |
64-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12655 |
MM54C89J |
64-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12656 |
MM54C89J_883 |
64-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12657 |
MM54C89N |
64-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12658 |
MM54C910 |
256 Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
| 12659 |
MM74C200 |
3 V to 15 V, 256-bit TRI-STATE random access read/write memory |
National Semiconductor |
| 12660 |
MM74C89 |
64-Bit TRI-STATE Random Access Read/Write Memory |
National Semiconductor |
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