| No. |
Part Name |
Description |
Manufacturer |
| 12751 |
NKT453 |
PNP Germanium AF Alloy Transistor in TO3 metal case |
Newmarket Transistors NKT |
| 12752 |
NLAS4684 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12753 |
NLAS4684 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12754 |
NLAS4684FCT1 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12755 |
NLAS4684FCT1 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12756 |
NLAS4684MNR2 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12757 |
NLAS4684MNR2 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12758 |
NLAS4684MR2 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12759 |
NLAS4684MR2 |
Dual SPDT .5 Ohm Analog Switch |
ON Semiconductor |
| 12760 |
NP8751BH |
8-bit control-oriented microcontroller with 4Kx8 internal program EPROM and 128x8 data RAM |
Intel |
| 12761 |
NS32FX210 |
Facsimile/Data Modem Analog Front End (AFE) |
National Semiconductor |
| 12762 |
NS32FX210J |
Facsimile/Data Modem Analog Front End (AFE) |
National Semiconductor |
| 12763 |
NS32FX210V |
Facsimile/Data Modem Analog Front End (AFE) |
National Semiconductor |
| 12764 |
NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM) |
NTE Electronics |
| 12765 |
NTE3009 |
Discrete LED indicator. Diffused orange, gallium arsenide phosphide on gallium phosphide orange. |
NTE Electronics |
| 12766 |
NTE3028 |
Infrared Emitting Diode PN Gallium Arsenide |
NTE Electronics |
| 12767 |
NTE65101 |
Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) |
NTE Electronics |
| 12768 |
NTE6810 |
Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM) |
NTE Electronics |
| 12769 |
NX6508GH47 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). |
NEC |
| 12770 |
NX6508GH49 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ). |
NEC |
| 12771 |
NX6508GH51 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). |
NEC |
| 12772 |
NX6508GH53 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1530 nm (typ). |
NEC |
| 12773 |
NX6508GH55 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1550 nm (typ). |
NEC |
| 12774 |
NX6508GH57 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). |
NEC |
| 12775 |
NX6508GH59 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). |
NEC |
| 12776 |
NX6508GH61 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1610 nm (typ). |
NEC |
| 12777 |
NX6508GK47 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). |
NEC |
| 12778 |
NX6508GK49 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ). |
NEC |
| 12779 |
NX6508GK51 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). |
NEC |
| 12780 |
NX6508GK53 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1530 nm (typ). |
NEC |
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