| No. |
Part Name |
Description |
Manufacturer |
| 12691 |
2N5546 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12692 |
2N5546 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12693 |
2N5547 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12694 |
2N5547 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12695 |
2N5548 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 12696 |
2N5549 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12697 |
2N5549 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12698 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 12699 |
2N555 |
Germanium PNP Transistor |
Motorola |
| 12700 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12701 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 12702 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12703 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 12704 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12705 |
2N5550 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 12706 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 12707 |
2N5550 |
Amplifier Transistors |
Motorola |
| 12708 |
2N5550 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 12709 |
2N5550 |
NPN high-voltage transistors |
Philips |
| 12710 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 12711 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 12712 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 12713 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 12714 |
2N5550-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 12715 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12716 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12717 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12718 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12719 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12720 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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