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Datasheets for ANSISTO

Datasheets found :: 97854
Page: | 421 | 422 | 423 | 424 | 425 | 426 | 427 | 428 | 429 |
No. Part Name Description Manufacturer
12721 2N5550_D26Z NPN Epitaxial Silicon Transistor Fairchild Semiconductor
12722 2N5550_J24Z NPN Epitaxial Silicon Transistor Fairchild Semiconductor
12723 2N5551 NPN Silicon Transistor (General purpose amplifier High voltage application) AUK Corp
12724 2N5551 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Boca Semiconductor Corporation
12725 2N5551 Leaded Small Signal Transistor General Purpose Central Semiconductor
12726 2N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE Continental Device India Limited
12727 2N5551 NPN Silicon Epitaxial Planar Transistor Honey Technology
12728 2N5551 High Voltage Transistor Korea Electronics (KEC)
12729 2N5551 TO-92 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
12730 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
12731 2N5551 Amplifier Transistors Motorola
12732 2N5551 NPN Transistor - General Purpose AMPS and Switches National Semiconductor
12733 2N5551 NPN high-voltage transistors Philips
12734 2N5551 NPN Epitaxial Silicon Transistor Samsung Electronic
12735 2N5551 NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
12736 2N5551 Silicon NPN epitaxial transistor (PCT Process) TOSHIBA
12737 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
12738 2N5551-T Transistor Rectron Semiconductor
12739 2N5551C High Voltage Transistor Korea Electronics (KEC)
12740 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12741 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12742 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12743 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12744 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12745 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12746 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12747 2N5551S High Voltage Transistor Korea Electronics (KEC)
12748 2N5551SC High Voltage Transistor Korea Electronics (KEC)
12749 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
12750 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics


Datasheets found :: 97854
Page: | 421 | 422 | 423 | 424 | 425 | 426 | 427 | 428 | 429 |



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