No. |
Part Name |
Description |
Manufacturer |
12721 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12722 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12723 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
12724 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
12725 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
12726 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
12727 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
12728 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
12729 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
12730 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
12731 |
2N5551 |
Amplifier Transistors |
Motorola |
12732 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
12733 |
2N5551 |
NPN high-voltage transistors |
Philips |
12734 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
12735 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
12736 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
12737 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
12738 |
2N5551-T |
Transistor |
Rectron Semiconductor |
12739 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
12740 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12741 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12742 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12743 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12744 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12745 |
2N5551RUBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12746 |
2N5551RUBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12747 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
12748 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
12749 |
2N5551SHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
12750 |
2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
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