| No. |
Part Name |
Description |
Manufacturer |
| 12721 |
2N5961 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 12722 |
2N5962 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 12723 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 12724 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 12725 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 12726 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 12727 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 12728 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 12729 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 12730 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 12731 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 12732 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 12733 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 12734 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 12735 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 12736 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 12737 |
2N6167 |
Thyristor PNPN - Silicon Controlled Rectifier 20A RMS 100V |
Motorola |
| 12738 |
2N6168 |
Thyristor PNPN - Silicon Controlled Rectifier 20A RMS 200V |
Motorola |
| 12739 |
2N6169 |
Thyristor PNPN - Silicon Controlled Rectifier 20A RMS 400V |
Motorola |
| 12740 |
2N6170 |
Thyristor PNPN - Silicon Controlled Rectifier 20A RMS 600V |
Motorola |
| 12741 |
2N6171 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 12742 |
2N6172 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 12743 |
2N6173 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 12744 |
2N6174 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
| 12745 |
2N6236 |
4.0 Amperes RMS plastic thyristor (silicon controlled rectifier) |
Motorola |
| 12746 |
2N6240 |
Silicon controlled Rectifiers Reverse Blocking Triode Thyristors |
Motorola |
| 12747 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 12748 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 12749 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 12750 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
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