| No. |
Part Name |
Description |
Manufacturer |
| 12781 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 12782 |
2N6504 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12783 |
2N6504 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12784 |
2N6505 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12785 |
2N6505 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12786 |
2N6505T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12787 |
2N6505T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12788 |
2N6507 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12789 |
2N6507 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12790 |
2N6507T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12791 |
2N6507T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12792 |
2N6508 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12793 |
2N6508 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12794 |
2N6509 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12795 |
2N6509 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12796 |
2N6509T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12797 |
2N6509T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 12798 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 12799 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 12800 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 12801 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12802 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12803 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12804 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12805 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12806 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 12807 |
2N6564 |
300 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 12808 |
2N6565 |
400 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 12809 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 12810 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
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