No. |
Part Name |
Description |
Manufacturer |
1291 |
MAX677AMJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1292 |
MAX677BCPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1293 |
MAX677BCWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1294 |
MAX677BEPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1295 |
MAX677BEWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1296 |
MAX677BMJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1297 |
MAX678ACJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1298 |
MAX678ACPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1299 |
MAX678ACWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1300 |
MAX678AEJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1301 |
MAX678AEPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1302 |
MAX678AEWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1303 |
MAX678AMJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1304 |
MAX678BCPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1305 |
MAX678BCWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1306 |
MAX678BEPP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1307 |
MAX678BEWP |
800mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1308 |
MAX678BMJP |
889mW; V(cc): -0.3 to +20V; calibrated, low-drift, +4.096V / +5V / +10V precision voltage reference. For high resolution 16-bit ADCs and DACs, precision test and measurement systems, precision calibrated voltage-reference, high-accuracy tr |
MAXIM - Dallas Semiconductor |
1309 |
MAX8922L |
30V Li+ Linear Battery Charger with GSM Test Mode in 3mm x 2mm TDFN |
MAXIM - Dallas Semiconductor |
1310 |
MAX8922LETB+ |
30V Li+ Linear Battery Charger with GSM Test Mode in 3mm x 2mm TDFN |
MAXIM - Dallas Semiconductor |
1311 |
MAX8922LETB+T |
30V Li+ Linear Battery Charger with GSM Test Mode in 3mm x 2mm TDFN |
MAXIM - Dallas Semiconductor |
1312 |
MMBZ5226B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.3 V. Test current 20.0 mA. |
Chenyi Electronics |
1313 |
MMBZ5226B |
Surface mount zener diode. Nominal zener voltage 3.3V, test current 20.0mA. |
Jinan Gude Electronic Device |
1314 |
MMBZ5227B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.6 V. Test current 20.0 mA. |
Chenyi Electronics |
1315 |
MMBZ5227B |
Surface mount zener diode. Nominal zener voltage 3.6V, test current 20.0mA. |
Jinan Gude Electronic Device |
1316 |
MMBZ5228B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.9 V. Test current 20.0 mA. |
Chenyi Electronics |
1317 |
MMBZ5228B |
Surface mount zener diode. Nominal zener voltage 3.9V, test current 20.0mA. |
Jinan Gude Electronic Device |
1318 |
MMBZ5229B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA. |
Chenyi Electronics |
1319 |
MMBZ5229B |
Surface mount zener diode. Nominal zener voltage 4.3V, test current 20.0mA. |
Jinan Gude Electronic Device |
1320 |
MMBZ5230B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.7 V. Test current 20.0 mA. |
Chenyi Electronics |
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