| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
BCY59D |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1292 |
BCY59M |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1293 |
BCY59X |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1294 |
BCY72 |
Trans GP BJT PNP 25V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1295 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 1296 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
| 1297 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 1298 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 1299 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 1300 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 1301 |
BF840 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 1302 |
BF841 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 1303 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1304 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1305 |
BFQ54 |
Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 |
New Jersey Semiconductor |
| 1306 |
BFQ591 |
Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 |
New Jersey Semiconductor |
| 1307 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1308 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1309 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 1310 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
| 1311 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
| 1312 |
BSR76 |
MOSPOWER N-Channel Enhancement Mode Transistor 240V 0.2A |
Siliconix |
| 1313 |
BSS138-G |
MOSFET, VDS=50V, ID=0.22A, PD=350mW |
Comchip Technology |
| 1314 |
BSS138N |
Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A |
Infineon |
| 1315 |
BSS138W |
Low Voltage MOSFETs - SOT323, 60V, 3.5Ohm, 0.28A |
Infineon |
| 1316 |
BSS7728N |
Low Voltage MOSFETs - SOT23, 60V, RDSon = 5.0Ohm, 0.2A |
Infineon |
| 1317 |
BSS87 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-89, RDSon=6.0 Ohm, 0.29A, LL |
Infineon |
| 1318 |
BSX52 |
Trans GP BJT NPN 25V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1319 |
BSX52A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 1320 |
BUZ 20 |
Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 13.5A, NL |
Infineon |
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