No. |
Part Name |
Description |
Manufacturer |
1321 |
BUZ 72 A |
Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, NL |
Infineon |
1322 |
BUZ 72 AL |
Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, LL |
Infineon |
1323 |
BUZ20 |
12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET |
Intersil |
1324 |
BUZ31 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL |
Infineon |
1325 |
BUZ31L |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 13.5A, LL |
Infineon |
1326 |
BUZ72 L |
Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL |
Infineon |
1327 |
BUZ72 SMD |
Power MOSFET, 100V, D²PAK, RDSon=0.2 Ohm, 10A, NL |
Infineon |
1328 |
BUZ72A |
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
1329 |
BUZ72A |
9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET |
Intersil |
1330 |
BUZ72AL |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, LL |
Infineon |
1331 |
BUZ72L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL |
Infineon |
1332 |
BUZ72L SMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL |
Infineon |
1333 |
BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=0.2 Ohm, 10A, NL |
Infineon |
1334 |
BY127 |
0.25 TO 0.5 AMP.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
1335 |
BY133 |
0.25 TO 0.5 AMP.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
1336 |
BY513 |
0.25 TO 0.5 AMP.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
1337 |
BY516 |
0.25 TO 0.5 AMP.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
1338 |
BY520 |
0.25 TO 0.5 AMP.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
1339 |
BZV86C3V2 |
Diode 10V 0.2A 2-Pin ALF |
New Jersey Semiconductor |
1340 |
BZW06-10 |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1341 |
BZW06-10-98 |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1342 |
BZW06-10B |
Diode TVS Single Bi-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1343 |
BZW06-162 |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1344 |
BZW06-162B |
Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1345 |
BZW06-40 |
Diode TVS Single Uni-Dir 40.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1346 |
BZW06-40B |
Diode TVS Single Bi-Dir 40.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
1347 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
1348 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
1349 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
1350 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
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