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Datasheets for 0.2

Datasheets found :: 3418
Page: | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |
No. Part Name Description Manufacturer
1321 BUZ 72 A Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, NL Infineon
1322 BUZ 72 AL Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, LL Infineon
1323 BUZ20 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET Intersil
1324 BUZ31 Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL Infineon
1325 BUZ31L Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 13.5A, LL Infineon
1326 BUZ72 L Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL Infineon
1327 BUZ72 SMD Power MOSFET, 100V, D²PAK, RDSon=0.2 Ohm, 10A, NL Infineon
1328 BUZ72A 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
1329 BUZ72A 9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET Intersil
1330 BUZ72AL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.25 Ohm, 9A, LL Infineon
1331 BUZ72L Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL Infineon
1332 BUZ72L SMD Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Infineon
1333 BUZ72SMD Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=0.2 Ohm, 10A, NL Infineon
1334 BY127 0.25 TO 0.5 AMP.SILICON RECTIFIERS Jinan Gude Electronic Device
1335 BY133 0.25 TO 0.5 AMP.SILICON RECTIFIERS Jinan Gude Electronic Device
1336 BY513 0.25 TO 0.5 AMP.SILICON RECTIFIERS Jinan Gude Electronic Device
1337 BY516 0.25 TO 0.5 AMP.SILICON RECTIFIERS Jinan Gude Electronic Device
1338 BY520 0.25 TO 0.5 AMP.SILICON RECTIFIERS Jinan Gude Electronic Device
1339 BZV86C3V2 Diode 10V 0.2A 2-Pin ALF New Jersey Semiconductor
1340 BZW06-10 Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1341 BZW06-10-98 Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1342 BZW06-10B Diode TVS Single Bi-Dir 10.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1343 BZW06-162 Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1344 BZW06-162B Diode TVS Single Uni-Dir 10.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1345 BZW06-40 Diode TVS Single Uni-Dir 40.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1346 BZW06-40B Diode TVS Single Bi-Dir 40.2V 600W 2-Pin DO-15 New Jersey Semiconductor
1347 C4258-01 Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector Hamamatsu Corporation
1348 C4258-01 Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector Hamamatsu Corporation
1349 C4258-02 Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector Hamamatsu Corporation
1350 C4258-02 Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector Hamamatsu Corporation


Datasheets found :: 3418
Page: | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |



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