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Datasheets for IEL

Datasheets found :: 19258
Page: | 430 | 431 | 432 | 433 | 434 | 435 | 436 | 437 | 438 |
No. Part Name Description Manufacturer
12991 PTF10195 125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
12992 PTF102027 40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
12993 PTF102028 18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
12994 PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
12995 PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon
12996 PTF180601 LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
12997 PTF180601C LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
12998 PTF180601E LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz Infineon
12999 PTF181301 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
13000 PTF181301A LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz Infineon
13001 PTF191601 LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
13002 PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
13003 PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13004 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13005 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13006 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
13007 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
13008 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
13009 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
13010 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
13011 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
13012 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13013 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13014 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13015 Q62702-F1240 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
13016 Q62702-F1287 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
13017 Q62702-F182 N-Channel junction field-Effect Transistors Siemens
13018 Q62702-F205 N-Channel junction field-Effect Transistors Siemens
13019 Q62702-F209 N-Channel junction field-Effect Transistors Siemens
13020 Q62702-F219 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens


Datasheets found :: 19258
Page: | 430 | 431 | 432 | 433 | 434 | 435 | 436 | 437 | 438 |



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