No. |
Part Name |
Description |
Manufacturer |
12991 |
PTF10195 |
125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
12992 |
PTF102027 |
40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
12993 |
PTF102028 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
12994 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
12995 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
12996 |
PTF180601 |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
12997 |
PTF180601C |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
12998 |
PTF180601E |
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
Infineon |
12999 |
PTF181301 |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
13000 |
PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
13001 |
PTF191601 |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
13002 |
PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
13003 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13004 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13005 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13006 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
13007 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
13008 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
13009 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
13010 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
13011 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
13012 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13013 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13014 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13015 |
Q62702-F1240 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
13016 |
Q62702-F1287 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
13017 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
13018 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
13019 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
13020 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
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