| No. |
Part Name |
Description |
Manufacturer |
| 13111 |
RGTH60TS65D |
650V 30A Field Stop Trench IGBT |
ROHM |
| 13112 |
RGTH60TS65DGTL |
650V 30A Field Stop Trench IGBT |
ROHM |
| 13113 |
RGTH60TS65GTL |
650V 30A Field Stop Trench IGBT |
ROHM |
| 13114 |
RGTH80TK65 |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13115 |
RGTH80TK65D |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13116 |
RGTH80TK65DGC11 |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13117 |
RGTH80TK65GC11 |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13118 |
RGTH80TS65 |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13119 |
RGTH80TS65D |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13120 |
RGTH80TS65DGTL |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13121 |
RGTH80TS65GTL |
650V 40A Field Stop Trench IGBT |
ROHM |
| 13122 |
RHY10 |
Axial magnetic field probe |
Siemens |
| 13123 |
RHY10 |
Hall-effect device measuring axial magnetic field |
Siemens |
| 13124 |
RHY11 |
Axial magnetic field probe |
Siemens |
| 13125 |
RHY11 |
Hall-effect device measuring axial magnetic field |
Siemens |
| 13126 |
RHY17 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 13127 |
RHY18 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 13128 |
RHY18-S1 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 13129 |
RHY19 |
Hall generator - field probe |
Siemens |
| 13130 |
RHY19 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 13131 |
ROS01 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 13132 |
ROS02 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 13133 |
ROS04 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 13134 |
ROS05 |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 13135 |
ROS05A |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 13136 |
ROS05B |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 13137 |
ROS05C |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 13138 |
ROS05D |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 13139 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 13140 |
RVM35A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
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