| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 1322 |
2N4427 |
NPN silicon high frequency transistor 1W - 175MHz |
Motorola |
| 1323 |
2N4427 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 1324 |
2N4428 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
| 1325 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1326 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1327 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1328 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1329 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1330 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1331 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1332 |
2N4881 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1333 |
2N4882 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1334 |
2N4883 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1335 |
2N4884 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1336 |
2N4885 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1337 |
2N4886 |
N-CHANNEL Field Effect Transistor High Voltage Amplifier |
Amelco Semiconductor |
| 1338 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1339 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1340 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1341 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1342 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1343 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1344 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1345 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 1346 |
2N4957 |
PNP silicon high frequency transistor 1.2GHz - 2.0mAdc |
Motorola |
| 1347 |
2N4958 |
PNP silicon high frequency transistor 1.0GHz - 2.0mAdc |
Motorola |
| 1348 |
2N4959 |
PNP silicon high frequency transistor 1.0GHz - 2.0mAdc |
Motorola |
| 1349 |
2N4959 |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
New Jersey Semiconductor |
| 1350 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
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