| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
2N5416 |
Silicon PNP High Voltage Transistor |
IPRS Baneasa |
| 1412 |
2N5416 |
PNP high-voltage transistors |
Philips |
| 1413 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1414 |
2N5484 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1415 |
2N5484 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 1416 |
2N5485 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1417 |
2N5485 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 1418 |
2N5486 |
N-Channel JFET High Frequency Amplifier |
Calogic |
| 1419 |
2N5486 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 1420 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 1421 |
2N5550 |
NPN high-voltage transistors |
Philips |
| 1422 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1423 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 1424 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 1425 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 1426 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 1427 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1428 |
2N5564 |
Matched High Gain |
Vishay |
| 1429 |
2N5565 |
Matched High Gain |
Vishay |
| 1430 |
2N5566 |
Matched High Gain |
Vishay |
| 1431 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
| 1432 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 1433 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 1434 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1435 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1436 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1437 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1438 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 1439 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1440 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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