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Datasheets for AL ELE

Datasheets found :: 1662
Page: | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |
No. Part Name Description Manufacturer
1321 MPS2222 Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. General Electric Solid State
1322 MPS2222A Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. General Electric Solid State
1323 MPS2906 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
1324 MPS2906A Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
1325 MPS2907 Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
1326 MPS2907A Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. General Electric Solid State
1327 MPS3638 Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. General Electric Solid State
1328 MPS3638A Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. General Electric Solid State
1329 MPS5172 NPN silicon transistor. 25V, 100mA. General Electric Solid State
1330 MPS6531 Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. General Electric Solid State
1331 MPS6532 Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. General Electric Solid State
1332 MPS6534 Planar passivated epitaxial PNP silicon transistor. -40V, -600mA. General Electric Solid State
1333 NMC9306 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1334 NMC9306EM8 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1335 NMC9306EN 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1336 NMC9306M8 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1337 NMC9306N 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1338 NMC9307 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1339 NMC9307EM Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
1340 NMC9307EN Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
1341 NMC9307M Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
1342 NMC9307N Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
1343 NMC9313B 5V, 256-bit serial electrically erasable programmable memory National Semiconductor
1344 NMC9314B 5V, 1024-bit serial electrically erasable programmable memory National Semiconductor
1345 NMC9346 1024 Bit Serial Electrically Erasable Programmable Memory National Semiconductor
1346 NMC9346EM8 +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
1347 NMC9346EN +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
1348 NMC9346MB +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
1349 NMC9346N +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
1350 OA1154 55 V, 500 mA, gold bonded germanium diode BKC International Electronics


Datasheets found :: 1662
Page: | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |



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