No. |
Part Name |
Description |
Manufacturer |
1321 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
1322 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
1323 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1324 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1325 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1326 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1327 |
MPS3638 |
Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. |
General Electric Solid State |
1328 |
MPS3638A |
Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. |
General Electric Solid State |
1329 |
MPS5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
1330 |
MPS6531 |
Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1331 |
MPS6532 |
Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. |
General Electric Solid State |
1332 |
MPS6534 |
Planar passivated epitaxial PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1333 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1334 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1335 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1336 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1337 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1338 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1339 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1340 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1341 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1342 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1343 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1344 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1345 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1346 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1347 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1348 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1349 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1350 |
OA1154 |
55 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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