No. |
Part Name |
Description |
Manufacturer |
1351 |
OA1161 |
140 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1352 |
OA1180 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1353 |
OA1182 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1354 |
OA180 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1355 |
OEI2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
1356 |
OEI2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
1357 |
OP-07 |
Ultra Low Offset Voltage Operational Amplifier |
General Electric Solid State |
1358 |
PCF35N08 |
N Channel Enhancement Mode Power Field Effect Transister Chip |
General Electric Solid State |
1359 |
PN2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
1360 |
PN2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
1361 |
PN5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
1362 |
RCA1000 |
8A silicon N-P-N darlington power transistor. |
General Electric Solid State |
1363 |
RCA1001 |
8A silicon N-P-N darlington power transistor. |
General Electric Solid State |
1364 |
RCA1804 |
Silicon transistor for audio-amplifier applications. 225V, 150W. |
General Electric Solid State |
1365 |
RCA1805 |
Silicon transistor for audio-amplifier applications. 275V, 150W. |
General Electric Solid State |
1366 |
RCA3054 |
Silicon N-P-N VERSAWATT transistor. 90V, 36W. |
General Electric Solid State |
1367 |
RCA3055 |
Silicon N-P-N VERSAWATT transistor. 100V, 75W. |
General Electric Solid State |
1368 |
RCA3773 |
Silicon N-P-N epitaxial-base high power transistor. 160V, 150W. |
General Electric Solid State |
1369 |
RCA6340 |
25A silicon N-P-N power transistor. |
General Electric Solid State |
1370 |
RCA6341 |
25A silicon N-P-N power transistor. |
General Electric Solid State |
1371 |
RCA8638C |
Silicon N-P-N epitaxial-base high power transistor. 140V, 200W. |
General Electric Solid State |
1372 |
RCA8638D |
Silicon N-P-N epitaxial-base high power transistor. 120V, 200W. |
General Electric Solid State |
1373 |
RCA8638E |
Silicon N-P-N epitaxial-base high power transistor. 100V, 200W. |
General Electric Solid State |
1374 |
RCA8766 |
10A N-P-N monolithic darlington power transistor. 350V, 150W. |
General Electric Solid State |
1375 |
RCA8766A |
10A N-P-N monolithic darlington power transistor. 350V, 150W. |
General Electric Solid State |
1376 |
RCA8766B |
10A N-P-N monolithic darlington power transistor. 400V, 150W. |
General Electric Solid State |
1377 |
RCA8766C |
10A N-P-N monolithic darlington power transistor. 400V, 150W. |
General Electric Solid State |
1378 |
RCA8766D |
10A N-P-N monolithic darlington power transistor. 450V, 150W. |
General Electric Solid State |
1379 |
RCA8766E |
10A N-P-N monolithic darlington power transistor. 450V, 150W. |
General Electric Solid State |
1380 |
RCA9116C |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. |
General Electric Solid State |
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