| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1322 |
2N929 |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 1323 |
2N929 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 1324 |
2N930 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 1325 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1326 |
2N930 |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 1327 |
2N930 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 1328 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1329 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1330 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1331 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1332 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1333 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1334 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1335 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1336 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1337 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1338 |
2SA0564 |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1339 |
2SA0564A |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1340 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1341 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1342 |
2SA0748 |
Power Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1343 |
2SA1006 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1344 |
2SA1006A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1345 |
2SA1006B |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1346 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1347 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1348 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1349 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1350 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
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