DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for EPI

Datasheets found :: 15822
Page: | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 |
No. Part Name Description Manufacturer
1201 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1202 2N6292 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1203 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1204 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1205 2N6303 Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case SGS-ATES
1206 2N6338A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1207 2N6339A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1208 2N6340A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1209 2N6341A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1210 2N6354 Silicon planar multiepitaxial NPN transistor SGS-ATES
1211 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1212 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1213 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1214 2N6427 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Samsung Electronic
1215 2N6428 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
1216 2N6428A NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
1217 2N6436A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1218 2N6437A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1219 2N6438A PNP High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
1220 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
1221 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1222 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
1223 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
1224 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
1225 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1226 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
1227 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
1228 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
1229 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
1230 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State


Datasheets found :: 15822
Page: | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 |



© 2024 - www Datasheet Catalog com