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Datasheets for EPI

Datasheets found :: 15822
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2N6121 Epitaxial-base transistor for linear and switching applications SGS-ATES
1172 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
1173 2N6122 Silicon epitaxial-base NPN medium power transistor SGS-ATES
1174 2N6122 Epitaxial-base transistor for linear and switching applications SGS-ATES
1175 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1176 2N6123 Silicon epitaxial-base NPN medium power transistor SGS-ATES
1177 2N6123 Epitaxial-base transistor for linear and switching applications SGS-ATES
1178 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
1179 2N6124 Silicon epitaxial-base PNP medium power transistor SGS-ATES
1180 2N6124 Epitaxial-base transistor for linear and switching applications SGS-ATES
1181 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
1182 2N6125 Silicon epitaxial-base PNP medium power transistor SGS-ATES
1183 2N6125 Epitaxial-base transistor for linear and switching applications SGS-ATES
1184 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
1185 2N6126 Silicon epitaxial-base PNP medium power transistor SGS-ATES
1186 2N6126 Epitaxial-base transistor for linear and switching applications SGS-ATES
1187 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
1188 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
1189 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
1190 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1191 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
1192 2N6288 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1193 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1194 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
1195 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1196 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
1197 2N6290 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1198 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1199 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
1200 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation


Datasheets found :: 15822
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |



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