No. |
Part Name |
Description |
Manufacturer |
1171 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1172 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1173 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1174 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1175 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
1176 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1177 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1178 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
1179 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1180 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1181 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1182 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1183 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1184 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1185 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1186 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1187 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
1188 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
1189 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
1190 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1191 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
1192 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
1193 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1194 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
1195 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1196 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1197 |
2N6290 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
1198 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1199 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1200 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| | | |