| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1112 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1113 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1114 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1115 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1116 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1117 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1118 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1119 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1120 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1121 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1122 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1123 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1124 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1125 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1126 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1127 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1128 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1129 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1130 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1131 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1132 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1133 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1134 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1135 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1136 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1137 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1138 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1139 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1140 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
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