| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
B260 |
2 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1322 |
B320 |
3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1323 |
B330 |
3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1324 |
B340 |
3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1325 |
B350 |
3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1326 |
B360 |
3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Fuji Electric |
| 1327 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 1328 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 1329 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 1330 |
BA157 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 1331 |
BA158 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 1332 |
BA159 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 1333 |
BA201 |
FAST RECOVERY DIODE |
Fuji Electric |
| 1334 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1335 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1336 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1337 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1338 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1339 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1340 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1341 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1342 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1343 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1344 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1345 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1346 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1347 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1348 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1349 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1350 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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