| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
BCR20B-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1382 |
BCR20B-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1383 |
BCR20C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 1384 |
BCR20C-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1385 |
BCR20C-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1386 |
BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 1387 |
BCR20KM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1388 |
BCR25A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1389 |
BCR25B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1390 |
BCR2PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1391 |
BCR2PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1392 |
BCR2PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1393 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1394 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1395 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1396 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1397 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1398 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1399 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1400 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1401 |
BCR3AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1402 |
BCR3AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1403 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1404 |
BCR3KM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1405 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1406 |
BCR3KM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1407 |
BCR3KM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1408 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1409 |
BCR3PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1410 |
BCR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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