No. |
Part Name |
Description |
Manufacturer |
1321 |
MOC3011 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1322 |
MOC3012 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1323 |
MOC3020 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1324 |
MOC3021 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1325 |
MOC3022 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1326 |
MOC3023 |
Photon coupled isolator. Ga As infrared emitting diode & light activated triac driver. |
General Electric Solid State |
1327 |
MPS-A12 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
1328 |
MPS-L01 |
Silicon Transistors |
General Electric Solid State |
1329 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
1330 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
1331 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1332 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1333 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1334 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1335 |
MPS3638 |
Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. |
General Electric Solid State |
1336 |
MPS3638A |
Planar passivated epitaxial PNP silicon transistor. -25V, -350mA. |
General Electric Solid State |
1337 |
MPS5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
1338 |
MPS6531 |
Planar passivated epitaxial NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1339 |
MPS6532 |
Planar passivated epitaxial NPN silicon transistor. 30V, 600mA. |
General Electric Solid State |
1340 |
MPS6534 |
Planar passivated epitaxial PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1341 |
NJW1150 |
6-Channel Electronic Volume |
New Japan Radio |
1342 |
NJW1150M |
6-CHANNEL ELECTRONIC VOLUME |
New Japan Radio |
1343 |
NJW1151 |
6-Channel Electronic Volume |
New Japan Radio |
1344 |
NJW1151M |
6-CHANNEL ELECTRONIC VOLUME |
New Japan Radio |
1345 |
NJW1153 |
6-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1346 |
NJW1153FG1 |
6-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1347 |
NJW1154 |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1348 |
NJW1154V |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1349 |
NJW1156 |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1350 |
NJW1156A |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
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