No. |
Part Name |
Description |
Manufacturer |
1351 |
NJW1156M |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1352 |
NJW1156V |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1353 |
NJW1157 |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1354 |
NJW1157B |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1355 |
NJW1157FC2 |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1356 |
NJW1191 |
4-channel Electronic Volume with Input Selector |
New Japan Radio |
1357 |
NJW1191V |
4-channel Electronic Volume with Input Selector |
New Japan Radio |
1358 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1359 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1360 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1361 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1362 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1363 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1364 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1365 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1366 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1367 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1368 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1369 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1370 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1371 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1372 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1373 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1374 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1375 |
OA1154 |
55 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1376 |
OA1161 |
140 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1377 |
OA1180 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1378 |
OA1182 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1379 |
OA180 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1380 |
OEI2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
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