No. |
Part Name |
Description |
Manufacturer |
13441 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
13442 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
13443 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
13444 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
13445 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
13446 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
13447 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
13448 |
MKT 1813 |
C-values 470 pF - 22 µF, Voltage 63 - 1000 VDC, Low Profile, AXIAL |
Vishay |
13449 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
13450 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
13451 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
13452 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
13453 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
13454 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
13455 |
MMBA811C6 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
13456 |
MMBA812M6 |
PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) |
Samsung Electronic |
13457 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
13458 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
13459 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
13460 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
13461 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
13462 |
MMBT2222A |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P |
Samsung Electronic |
13463 |
MMBT2222AT |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13464 |
MMBT2484 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U |
Samsung Electronic |
13465 |
MMBT2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
13466 |
MMBT2907A |
PNP Epitaxial Silicon Transistor, marking 2F |
Samsung Electronic |
13467 |
MMBT3904 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A |
Samsung Electronic |
13468 |
MMBT3904SL |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13469 |
MMBT3904T |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13470 |
MMBT3906 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2A |
Samsung Electronic |
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