No. |
Part Name |
Description |
Manufacturer |
13561 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
13562 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
13563 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
13564 |
MPD100 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
13565 |
MPD200 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
13566 |
MPD300 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
13567 |
MPD400 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
13568 |
MPD400-002 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
13569 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
13570 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
13571 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
13572 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
13573 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
13574 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
13575 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
13576 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
13577 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
13578 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
13579 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
13580 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
13581 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
13582 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
13583 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
13584 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
13585 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
13586 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
13587 |
MPS2923 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
13588 |
MPS2924 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
13589 |
MPS2925 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
13590 |
MPS2926 |
NPN silicon epitaxial transistor |
Motorola |
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