| No. |
Part Name |
Description |
Manufacturer |
| 13501 |
MD6100 |
Dual NPN-PNP complementary-pair silicon annular transistor |
Motorola |
| 13502 |
MD82C50A-5 |
CMOS Asynchronous Communications Element |
Intersil |
| 13503 |
MD82C50A-5B |
CMOS Asynchronous Communications Element |
Intersil |
| 13504 |
MD986 |
NPN-PNP silicon annular Star complementary pair dual transistor |
Motorola |
| 13505 |
MD986 |
NPN/PNP silicon complementary dual general purpose transistor. |
Motorola |
| 13506 |
MD986F |
NPN-PNP silicon annular Star complementary pair dual transistor TO-89 case |
Motorola |
| 13507 |
MDA4565 |
Colour transient improvement circuit for TV, equivalent TDA4565 |
Tesla Elektronicke |
| 13508 |
MEASUREMENTS |
S-PARAMETERS, Noise and power parameters, thermal resistance |
AVANTEK |
| 13509 |
MEASUREMENTS |
Application Note - Mircrowave Measurements |
NEC |
| 13510 |
MEASUREMENTS |
Application Note - Mircrowave Measurements |
NEC |
| 13511 |
MECP01 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 13512 |
MF122 |
COMPLEMENTARY SILICON POWER DARLINGTONS |
Motorola |
| 13513 |
MFE5000 |
Silicon P-Channel Enhancement MOS Field Effect Quad Transistor |
Motorola |
| 13514 |
MG256 |
SEVEN SEGEMENT NUMERIC DISPLAY |
Micro Electronics |
| 13515 |
MG80C286-10 |
High Performance Microprocessor with Memory Management and Protection |
Intersil |
| 13516 |
MG80C286-12 |
High Performance Microprocessor with Memory Management and Protection |
Intersil |
| 13517 |
MG80C883-10 |
High Performance Microprocessor with Memory Management and Protection |
Intersil |
| 13518 |
MG80C883-12 |
High Performance Microprocessor with Memory Management and Protection |
Intersil |
| 13519 |
MGA-665P8-BLK |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 13520 |
MGA-665P8-TR1 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 13521 |
MGA-665P8-TR2 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 13522 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13523 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13524 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13525 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13526 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13527 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13528 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13529 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13530 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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