| No. |
Part Name |
Description |
Manufacturer |
| 13531 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13532 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13533 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13534 |
MGSF1N02EL |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13535 |
MGSF1N02ELT1 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13536 |
MGSF1N02ELT3 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13537 |
MGSF1N02LT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13538 |
MGSF1N02LT3 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13539 |
MGSF1N03LT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13540 |
MGSF1N03LT3 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13541 |
MGSF1P02LT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13542 |
MGSF1P02LT3 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13543 |
MGSF3441VT1 |
OBSOLETE - REPLACEMENT P/N# - NTGS3441T1 |
ON Semiconductor |
| 13544 |
MGSF3441XT1 |
OBSOLETE - REPLACEMENT P/N# - NTGS3441T1 |
ON Semiconductor |
| 13545 |
MGSF3442VT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13546 |
MGSF3442XT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13547 |
MGSF3454VT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13548 |
MGSF3454XT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13549 |
MGSF3455VT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13550 |
MGSF3455XT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13551 |
MGSF3455XT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
| 13552 |
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13553 |
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13554 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13555 |
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13556 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13557 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13558 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13559 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13560 |
MH8224 |
Design, mechanical and climatic requirements, Reliability, acceptance tests |
Tesla Elektronicke |
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