| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
ASX210A09Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 9 V DC. |
Matsushita Electric Works(Nais) |
| 1352 |
ASX210A12 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tube packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
| 1353 |
ASX210A12X |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
| 1354 |
ASX210A12Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 12 V DC. |
Matsushita Electric Works(Nais) |
| 1355 |
ASX210A1H |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tube packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
| 1356 |
ASX210A1HX |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
| 1357 |
ASX210A1HZ |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 1.5 V DC. |
Matsushita Electric Works(Nais) |
| 1358 |
ASX210A24 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tube packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
| 1359 |
ASX210A24X |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
| 1360 |
ASX210A24Z |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 24 V DC. |
Matsushita Electric Works(Nais) |
| 1361 |
ASX210A4H |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tube packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
| 1362 |
ASX210A4HX |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
| 1363 |
ASX210A4HZ |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Surface-mount terminal. 1 coil latching. Tape and reel packing. Coil rating 4.5 V DC. |
Matsushita Electric Works(Nais) |
| 1364 |
AT43USB326 |
USB Multimedia keyboard controller with an embedded two part hub, 3 programmable end points. 16 Kbytes program ROM, 512 bytes SRAM and support for multiple 18 x 8 keyboard matrix. |
Atmel |
| 1365 |
ATMEGA168 |
16K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega168V). |
Atmel |
| 1366 |
ATMEGA48 |
4K byte self-programming Flash Program Memory, 512 byte SRAM, 256 Byte EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega48V). |
Atmel |
| 1367 |
ATMEGA88 |
8K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega88V). |
Atmel |
| 1368 |
ATTINY13 |
1-Kbyte In-System programmable Flash Program Memory, 64-Byte SRAM, 64-Byte EEPROM, 32-Byte Register File, 4-channel 10-bit A/D, Up to 16 MIPS throughput at 16 MHz, 5 Volts. 1.8 - 5.5 Volt Operation. |
Atmel |
| 1369 |
ATTINY28V |
2K Flash Program Memory, 128 Bytes SRAM (+32bytes register file), Keyboard interrupt. Up to 1 MIPS throughput at 1 MHz. 1.8 Volt operation |
Atmel |
| 1370 |
BC393 |
0.400W General Purpose PNP Metal Can Transistor. 180V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 1371 |
BC450 |
0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 50 - 220 hFE |
Continental Device India Limited |
| 1372 |
BC450A |
0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 120 - 220 hFE |
Continental Device India Limited |
| 1373 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 1374 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 1375 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 1376 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 1377 |
BD168 |
PNP silicon power transistor. 1.5 A, 60 V, 20 W. |
Motorola |
| 1378 |
BD170 |
PNP silicon power transistor. 1.5 A, 80 V, 20 W. |
Motorola |
| 1379 |
BD239C |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
| 1380 |
BD240C |
30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
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