| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
BD520 |
PNP silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1412 |
BD520-1 |
PNP silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1413 |
BD520-5 |
PNP silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1414 |
BD525-1 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 1415 |
BD525-5 |
NPN silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 1416 |
BD526-1 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 1417 |
BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. |
Motorola |
| 1418 |
BD527-1 |
NPN silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1419 |
BD527-5 |
NPN silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1420 |
BD528-1 |
PNP silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1421 |
BD528-5 |
PNP silicon annular amplifier transistor. 10 W, 80 V. |
Motorola |
| 1422 |
BD529-1 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 1423 |
BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 1424 |
BD530-1 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 1425 |
BD530-5 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 1426 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 1427 |
BD682 |
40.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 750 hFE. Complementary BD681 |
Continental Device India Limited |
| 1428 |
BD683 |
40.000W Darlington NPN Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
| 1429 |
BD684 |
40.000W Darlington PNP Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
| 1430 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
| 1431 |
BD901 |
8 A N-P-N darlington power transistor. 100 V. 70 W. |
General Electric Solid State |
| 1432 |
BD911 |
90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1433 |
BD912 |
90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1434 |
BD953 |
40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1435 |
BD954 |
40.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1436 |
BD955 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1437 |
BD956 |
40.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1438 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1439 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 1440 |
BF457 |
10.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
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