No. |
Part Name |
Description |
Manufacturer |
13621 |
NM93C56MN |
Electrically Erasable Programmable Memories |
National Semiconductor |
13622 |
NM93C56N |
Electrically Erasable Programmable Memories |
National Semiconductor |
13623 |
NM93C66EM |
Electrically Erasable Programmable Memories |
National Semiconductor |
13624 |
NM93C66EN |
Electrically Erasable Programmable Memories |
National Semiconductor |
13625 |
NM93C66M |
Electrically Erasable Programmable Memories |
National Semiconductor |
13626 |
NM93C66MM |
Electrically Erasable Programmable Memories |
National Semiconductor |
13627 |
NM93C66MN |
Electrically Erasable Programmable Memories |
National Semiconductor |
13628 |
NM93C66N |
Electrically Erasable Programmable Memories |
National Semiconductor |
13629 |
NMC27C128BN15 |
150 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13630 |
NMC27C128BN150 |
150 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13631 |
NMC27C128BN20 |
200 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13632 |
NMC27C128BN200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13633 |
NMC27C128BN25 |
250 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13634 |
NMC27C128BN250 |
250 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13635 |
NMC27C256BN15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13636 |
NMC27C256BN150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13637 |
NMC27C256BN20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13638 |
NMC27C256BN200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13639 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13640 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13641 |
NMC27C256BNE15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13642 |
NMC27C256BNE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13643 |
NMC27C256BNE20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13644 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13645 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13646 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
13647 |
NMC27C512AN15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13648 |
NMC27C512AN150 |
150 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13649 |
NMC27C512AN17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13650 |
NMC27C512AN170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
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