No. |
Part Name |
Description |
Manufacturer |
13651 |
NMC27C512AN20 |
200 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13652 |
NMC27C512AN200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13653 |
NMC27C512AN25 |
250 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13654 |
NMC27C512AN250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13655 |
NMC27C512ANE15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13656 |
NMC27C512ANE150 |
150 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13657 |
NMC27C512ANE17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13658 |
NMC27C512ANE170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13659 |
NMC27C512ANE20 |
200 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13660 |
NMC27C512ANE200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13661 |
NMC27C512ANE25 |
250 ns, Vcc=5V+/-5%,524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13662 |
NMC27C512ANE250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13663 |
NMC27C64N150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13664 |
NMC27C64N200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13665 |
NMC27C64N250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13666 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13667 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13668 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13669 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13670 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13671 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13672 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13673 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13674 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13675 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13676 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13677 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13678 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13679 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13680 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
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