| No. |
Part Name |
Description |
Manufacturer |
| 13801 |
GT100 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 13802 |
GT100/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 13803 |
GT100/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 13804 |
GT100/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 13805 |
GT100/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 13806 |
GT100/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 13807 |
GT100/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 13808 |
GT100/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 13809 |
GT100/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 13810 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13811 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13812 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13813 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13814 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13815 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 13816 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 13817 |
GT150 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 13818 |
GT150/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 13819 |
GT150/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 13820 |
GT150/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 13821 |
GT150/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 13822 |
GT150/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 13823 |
GT150/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 13824 |
GT150/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 13825 |
GT150/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 13826 |
GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 13827 |
GT15J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 13828 |
GT15J103 |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 13829 |
GT15J103(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 13830 |
GT15J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
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