No. |
Part Name |
Description |
Manufacturer |
13831 |
GT15J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13832 |
GT15J311(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13833 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
13834 |
GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13835 |
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
13836 |
GT15Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
13837 |
GT15Q102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
13838 |
GT15Q301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
13839 |
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
13840 |
GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
13841 |
GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION |
TOSHIBA |
13842 |
GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
13843 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
13844 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
13845 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
13846 |
GT250 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
13847 |
GT250/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
13848 |
GT250/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
13849 |
GT250/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
13850 |
GT250/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
13851 |
GT250/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
13852 |
GT250/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
13853 |
GT250/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
13854 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
13855 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13856 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13857 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13858 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
13859 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
13860 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
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