| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
2SC984 |
Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 1382 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1383 |
2SC995 |
Silicon NPN triple diffused MESA transistor, color TV video output applications |
TOSHIBA |
| 1384 |
2SC996 |
Silicon NPN triple diffused MESA transistor, color TV video output applications |
TOSHIBA |
| 1385 |
2SD1088 |
Silicon NPN triple diffused darlington high voltage power transistor, igniter applications |
TOSHIBA |
| 1386 |
2SD1148 |
Silicon NPN triple diffused power transistor, complementary to 2SB863 |
TOSHIBA |
| 1387 |
2SD1162 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 1388 |
2SD118 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1389 |
2SD118-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1390 |
2SD118-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1391 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1392 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1393 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1394 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1395 |
2SD119-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1396 |
2SD1208 |
Silicon NPN triple diffused transistor, power regulator for line operated TV |
TOSHIBA |
| 1397 |
2SD120H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
| 1398 |
2SD121H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
| 1399 |
2SD124AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1400 |
2SD125AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1401 |
2SD126AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1402 |
2SD1355 |
Silicon NPN triple diffused power transistor, complementary to 2SB995 |
TOSHIBA |
| 1403 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
| 1404 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 1405 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 1406 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
| 1407 |
2SD1433 |
Silicon NPN triple diffused MESA high voltage transistor, color TV horizontal output applications |
TOSHIBA |
| 1408 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 1409 |
2SD1618 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single PCP |
ON Semiconductor |
| 1410 |
2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
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