| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 1412 |
2SD2230 |
NPN epitaxial type silicon transistor, for low-frequenc |
NEC |
| 1413 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 1414 |
2SD234G |
Silicon NPN diffused junction power transistor, complementary to 2SB434G |
TOSHIBA |
| 1415 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 1416 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 1417 |
2SD2399 |
Transistor,NPN,Darlington |
ROHM |
| 1418 |
2SD608 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 1419 |
2SD716 |
Silicon NPN triple diffused power transistor, complementary to 2SB686 |
TOSHIBA |
| 1420 |
2SD75AH |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1421 |
2SD75H |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1422 |
2SD77 |
Germanium NPN Alloyed Junction Transistor, Audio Frequency Power Output |
Hitachi Semiconductor |
| 1423 |
2SD77A |
Germanium NPN Alloyed Junction Transistor, Audio Frequency Power Output |
Hitachi Semiconductor |
| 1424 |
2SD77AH |
Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output |
Hitachi Semiconductor |
| 1425 |
2SD77H |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Power Output |
Hitachi Semiconductor |
| 1426 |
2SD780R |
NPN silicon epitaxial transistor, audio frequency |
NEC |
| 1427 |
2SD818 |
Silicon NPN triple diffused MESA high voltage transistor, color TV horizontal output applications |
TOSHIBA |
| 1428 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 1429 |
2SD917 |
Silicon NPN triple diffused planar transistor, 330V, 7A |
Panasonic |
| 1430 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 1431 |
2SH13 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 1432 |
2SH14 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
| 1433 |
2SK16H |
Silicon N-CHANNEL Junction Type FET Transistor, High Input Impedance Amplifier |
Hitachi Semiconductor |
| 1434 |
2T6551 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1435 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 1436 |
300D-5 |
D thermistor, 300Ohm |
SEMITEC |
| 1437 |
302HT-1P-TR |
HT thermistor, 3KOhm |
SEMITEC |
| 1438 |
302IT |
IT thermistor, 3KOhm |
SEMITEC |
| 1439 |
303ET-1 |
ET thermistor, 30KOhm |
SEMITEC |
| 1440 |
303ET-2 |
ET thermistor, 30KOhm |
SEMITEC |
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