| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1382 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1383 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1384 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1385 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1386 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1387 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1388 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1389 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1390 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1391 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 1392 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1393 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1394 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1395 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 1396 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1397 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1398 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1399 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 1400 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
| 1401 |
1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1402 |
1SS309 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1403 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 1404 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 1405 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 1406 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1407 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1408 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1409 |
1SS336 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1410 |
1SS337 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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