No. |
Part Name |
Description |
Manufacturer |
1501 |
1SV328 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
1502 |
1SV329 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
1503 |
1SV50-1 |
FM/VHF tuner, AFC silicon epitaxial varactor diode ESVAC® |
NEC |
1504 |
20DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1505 |
20DL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1506 |
20DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1507 |
20DL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1508 |
20FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1509 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1510 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1511 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1512 |
20GL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1513 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1514 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
1515 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
1516 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
1517 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
1518 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
1519 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
1520 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
1521 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
1522 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
1523 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
1524 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
1525 |
2N1595 |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
1526 |
2N1595A |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
1527 |
2N1596 |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
1528 |
2N1596A |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
1529 |
2N1597 |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
1530 |
2N1597A |
Reverse Blocking Triode Thyristor (SCR) TO-5 package 1.0 AMPS AVG. |
Transitron Electronic |
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