| No. |
Part Name |
Description |
Manufacturer |
| 14011 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14012 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14013 |
2N297A |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14014 |
2N3009 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14015 |
2N301 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14016 |
2N3012 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14017 |
2N3013 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14018 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 14019 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 14020 |
2N3019 |
80V, 1A NPN Small Signal Transistor |
ON Semiconductor |
| 14021 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
| 14022 |
2N3019 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 14023 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14024 |
2N301A |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14025 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 14026 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 14027 |
2N3020 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 14028 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14029 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14030 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14031 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14032 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14033 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14034 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14035 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 14036 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 14037 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 14038 |
2N3053 |
General purpose, medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 14039 |
2N3053 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 14040 |
2N3053 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
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