| No. |
Part Name |
Description |
Manufacturer |
| 14101 |
2N3149 |
Silicon NPN Power Transistor, TO-114 package |
Silicon Transistor Corporation |
| 14102 |
2N3150 |
Silicon NPN Power Transistor, TO-114 package |
Silicon Transistor Corporation |
| 14103 |
2N3151 |
Silicon NPN Power Transistor, TO-114 package |
Silicon Transistor Corporation |
| 14104 |
2N3209 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14105 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14106 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14107 |
2N3209DCSM |
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
| 14108 |
2N3212 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 14109 |
2N3213 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 14110 |
2N3214 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 14111 |
2N3215 |
Germanium PNP Power Transistor, TO-37 Package |
Silicon Transistor Corporation |
| 14112 |
2N3217 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 14113 |
2N3218 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 14114 |
2N3219 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
| 14115 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 14116 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 14117 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 14118 |
2N3250 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 14119 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 14120 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 14121 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 14122 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 14123 |
2N3251 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
| 14124 |
2N3251 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14125 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 14126 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 14127 |
2N3252 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14128 |
2N3253 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14129 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 14130 |
2N3265 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
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