| No. |
Part Name |
Description |
Manufacturer |
| 14191 |
2N3417 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
| 14192 |
2N3426 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14193 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 14194 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 14195 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 14196 |
2N3439 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5416 |
Silicon Transistor Corporation |
| 14197 |
2N3439 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5416 |
Silicon Transistor Corporation |
| 14198 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14199 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14200 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14201 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14202 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 14203 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 14204 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 14205 |
2N3440 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5415 |
Silicon Transistor Corporation |
| 14206 |
2N3440 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5415 |
Silicon Transistor Corporation |
| 14207 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14208 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14209 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 14210 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 14211 |
2N3442 |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX20 |
SESCOSEM |
| 14212 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 14213 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 14214 |
2N3442 |
Silicon NPN Power Transistor, TO-3 package |
Silicon Transistor Corporation |
| 14215 |
2N3444 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 14216 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 14217 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 14218 |
2N3445 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 14219 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
| 14220 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
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