| No. |
Part Name |
Description |
Manufacturer |
| 14281 |
2N3611 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14282 |
2N3612 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14283 |
2N3613 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14284 |
2N3614 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14285 |
2N3615 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14286 |
2N3616 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14287 |
2N3617 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14288 |
2N3618 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 14289 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 14290 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 14291 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 14292 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 14293 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 14294 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 14295 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 14296 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 14297 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 14298 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 14299 |
2N3637 |
140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5 |
ON Semiconductor |
| 14300 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 14301 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 14302 |
2N3700 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
| 14303 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14304 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 14305 |
2N3700HR |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 14306 |
2N3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 14307 |
2N3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 14308 |
2N3700RHRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 14309 |
2N3700RHRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
| 14310 |
2N3700RUBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
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