No. |
Part Name |
Description |
Manufacturer |
14371 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
14372 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
14373 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
14374 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
14375 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
14376 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
14377 |
2N3637 |
140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5 |
ON Semiconductor |
14378 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
14379 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
14380 |
2N3700 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14381 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
14382 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
14383 |
2N3700HR |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14384 |
2N3700HRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14385 |
2N3700HRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14386 |
2N3700RHRG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14387 |
2N3700RHRT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14388 |
2N3700RUBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14389 |
2N3700RUBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14390 |
2N3700UB1 |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14391 |
2N3700UBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14392 |
2N3700UBT |
Hi-Rel NPN bipolar transistor 80 V, 1 A |
ST Microelectronics |
14393 |
2N3701 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14394 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
14395 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
14396 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
14397 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
14398 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
14399 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
14400 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| | | |