No. |
Part Name |
Description |
Manufacturer |
14461 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
14462 |
2N383 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
14463 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
14464 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
14465 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
14466 |
2N3839 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
14467 |
2N3840 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
14468 |
2N3841 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
14469 |
2N3842 |
SEPT® silicon PNP transistor switches, amplifiers and choppers |
Sprague |
14470 |
2N3846 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14471 |
2N3847 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14472 |
2N3848 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14473 |
2N3849 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14474 |
2N3850 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
14475 |
2N3851 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
14476 |
2N3853 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
14477 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
14478 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
14479 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
14480 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
14481 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
14482 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
14483 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
14484 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
14485 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
14486 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
14487 |
2N3870 |
SCRs 35 Ampere RMS, 100V |
Motorola |
14488 |
2N3871 |
SCRs 35 Ampere RMS, 200V |
Motorola |
14489 |
2N3872 |
SCRs 35 Ampere RMS, 400V |
Motorola |
14490 |
2N3873 |
SCRs 35 Ampere RMS, 600V |
Motorola |
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