No. |
Part Name |
Description |
Manufacturer |
14551 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
14552 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
14553 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
14554 |
2N398A |
PNP germanium transistor for high-voltage, audio-frequency applications |
Motorola |
14555 |
2N3996 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
14556 |
2N3996 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
14557 |
2N3997 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
14558 |
2N3997 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
14559 |
2N3998 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
14560 |
2N3999 |
Silicon NPN Power Transistor, TO-111 package |
Silicon Transistor Corporation |
14561 |
2N4002 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14562 |
2N4003 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
14563 |
2N4013 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
14564 |
2N4013 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
14565 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
14566 |
2N4014 |
HIGH-VOLTAGE, HIGH CURRENT SWITCH |
SGS Thomson Microelectronics |
14567 |
2N4014 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
14568 |
2N4026 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14569 |
2N4027 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14570 |
2N4028 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14571 |
2N4029 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14572 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
14573 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
14574 |
2N4030 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14575 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
14576 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
14577 |
2N4031 |
80 V, PNP medium power transistor |
Philips |
14578 |
2N4031 |
Silicon transistor, general purpose amplifiers and switches |
SGS-ATES |
14579 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
14580 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
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