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Datasheets for RANSISTO

Datasheets found :: 96147
Page: | 482 | 483 | 484 | 485 | 486 | 487 | 488 | 489 | 490 |
No. Part Name Description Manufacturer
14551 2N6499 POWER TRANSISTORS(5A,80W) MOSPEC Semiconductor
14552 2N6499 5A high voltage NPN silicon 80W power transistor Motorola
14553 2N6499 Silicon NPN Power Transistors TO-220C package Savantic
14554 2N65 Germanium PNP Transistor Motorola
14555 2N650 PNP Germanium transistor in the audio-frequency range applications Motorola
14556 2N650 Germanium PNP Transistor Motorola
14557 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
14558 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
14559 2N6500 Silicon NPN Power Transistors TO-66 package Savantic
14560 2N6500 NPN transistor, 110V, 4A SemeLAB
14561 2N6502 Leaded Small Signal Transistor Dual Central Semiconductor
14562 2N650A PNP Germanium transistor in the audio-frequency range applications Motorola
14563 2N650A Germanium PNP Transistor Motorola
14564 2N651 PNP Germanium transistor in the audio-frequency range applications Motorola
14565 2N651 Germanium PNP Transistor Motorola
14566 2N6510 Silicon NPN Power Transistors TO-3 package Savantic
14567 2N6511 Silicon NPN Power Transistors TO-3 package Savantic
14568 2N6512 Silicon NPN Power Transistors TO-3 package Savantic
14569 2N6513 Silicon NPN Power Transistors TO-3 package Savantic
14570 2N6514 Silicon NPN Power Transistors TO-3 package Savantic
14571 2N6515 Leaded Small Signal Transistor General Purpose Central Semiconductor
14572 2N6515 0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE Continental Device India Limited
14573 2N6515 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
14574 2N6515 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
14575 2N6515 Ic=500mA, Vce=10V transistor MCC
14576 2N6515 High Voltage Transistor 625mW Micro Commercial Components
14577 2N6515 High Voltage Transistors ON Semiconductor
14578 2N6515 NPN Epitaxial Silicon High Voltage Transistor Samsung Electronic
14579 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
14580 2N6515-D High Voltage Transistors ON Semiconductor


Datasheets found :: 96147
Page: | 482 | 483 | 484 | 485 | 486 | 487 | 488 | 489 | 490 |



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