| No. |
Part Name |
Description |
Manufacturer |
| 14611 |
2N6519 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14612 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 14613 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14614 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14615 |
2N6519 |
Ic=500mA, Vce=10V transistor |
MCC |
| 14616 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 14617 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
| 14618 |
2N6519 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14619 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 14620 |
2N6519BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14621 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
| 14622 |
2N6519TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14623 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 14624 |
2N651A |
Germanium PNP Transistor |
Motorola |
| 14625 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 14626 |
2N652 |
Germanium PNP Transistor |
Motorola |
| 14627 |
2N6520 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14628 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 14629 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 14630 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14631 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14632 |
2N6520 |
Ic=500mA, Vce=10V transistor |
MCC |
| 14633 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 14634 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
| 14635 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14636 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 14637 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 14638 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14639 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
| 14640 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
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