| No. |
Part Name |
Description |
Manufacturer |
| 151 |
GS880E32T-11.5 |
100MHz 11.5ns 256K x 32 9Mb sync burst SRAM |
GSI Technology |
| 152 |
GS880E36T-11.5 |
100MHz 11.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 153 |
GS880E36T-11.5I |
100MHz 11.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
| 154 |
GS88118T-11.5 |
100MHz 11.5ns 514K x 18 8Mb sync burst SRAM |
GSI Technology |
| 155 |
GS88118T-11.5I |
100MHz 11.5ns 514K x 18 8Mb sync burst SRAM |
GSI Technology |
| 156 |
GS88136T-11.5 |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 157 |
GS88136T-11.5I |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 158 |
GS881E18T-11.5 |
100MHz 11.5ns 514K x 18 8Mb sync burst SRAM |
GSI Technology |
| 159 |
GS881E18T-11.5I |
100MHz 11.5ns 514K x 18 8Mb sync burst SRAM |
GSI Technology |
| 160 |
GS881E36T-11.5 |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 161 |
GS881E36T-11.5I |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
| 162 |
GS88218B-11.5 |
100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 163 |
GS88218B-11.5I |
100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 164 |
GS88236B-11.5 |
100MHz 11.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 165 |
GS88236B-11.5I |
100MHz 11.5ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 166 |
HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz |
Hittite Microwave Corporation |
| 167 |
HMC362 |
GaAs HBT MMIC DIVIDE-BY-4, DC - 11.0 GHz |
Hittite Microwave Corporation |
| 168 |
HMC443LP4 |
SMT GaAs HBT MMIC x4 ACTIVE FREQUENCY MULTIPLIER, 9.8 - 11.2 GHz OUTPUT |
Hittite Microwave Corporation |
| 169 |
HMC444LP4 |
SMT GaAs HBT MMIC x8 ACTIVE FREQUENCY MULTIPLIER, 9.9 - 11.2 GHz OUTPUT |
Hittite Microwave Corporation |
| 170 |
HMC445LP4 |
SMT GaAs HBT MMIC x16 ACTIVE FREQUENCY MULTIPLIER, 9.9 - 11.0 GHz OUTPUT |
Hittite Microwave Corporation |
| 171 |
KZY85 |
Zener diode for stabilisation 11.0V |
Tesla Elektronicke |
| 172 |
MA2110-A |
Si planar. Stabilized power supply. Nom zener voltage 11.0 V. |
Panasonic |
| 173 |
MA2110-B |
Si planar. Stabilized power supply. Nom zener voltage 11.0 V. |
Panasonic |
| 174 |
MAX3945 |
1.0625Gbps to 11.3Gbps, SFP+ Dual-Path Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 175 |
MAX3945AETE+ |
1.0625Gbps to 11.3Gbps, SFP+ Dual-Path Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 176 |
MAX3945AETE+T |
1.0625Gbps to 11.3Gbps, SFP+ Dual-Path Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 177 |
MAX3945ETE+ |
1.0625Gbps to 11.3Gbps, SFP+ Dual-Path Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 178 |
MAX3945ETE+T |
1.0625Gbps to 11.3Gbps, SFP+ Dual-Path Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 179 |
MAX3946 |
1Gbps to 11.3Gbps, SFP+ Laser Driver with Laser Impedance Mismatch Tolerance |
MAXIM - Dallas Semiconductor |
| 180 |
MAX3946ETG+ |
1Gbps to 11.3Gbps, SFP+ Laser Driver with Laser Impedance Mismatch Tolerance |
MAXIM - Dallas Semiconductor |
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